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PolarHV TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH 30N60P
IXTQ 30N60P
IXTT 30N60P
IXTV 30N60P
IXTV 30N60PS
V DSS = 600 V
I D25 = 30 A
R DS(on) ≤ 240 m ?
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
V GSS
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C; R GS = 1 M ?
Continuous
600
600
± 30
V
V
V
TO-247 (IXTH)
V GSM
I D25
Transient
T C = 25 ° C
± 40
30
V
A
G
D
S
D (TAB)
I DM
I AR
E AR
E AS
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
T C = 25 ° C
80
30
50
1.5
A
A
mJ
J
TO-3P (IXTQ)
dv/dt
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS ,
T J ≤ 150 ° C, R G = 4 ?
10
V/ns
G
D
S
D (TAB)
P D
T C = 25 ° C
540
W
TO-268 (IXTT)
T J
T JM
T stg
-55 ... +150
150
-55 ... +150
° C
° C
° C
G
S
T L
T SOLD
M d
F C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-3P, TO-247)
Mounting force (PLUS220)
300 ° C
260 ° C
1.13/10 Nm/lb.in.
11..65/2.5..15 N/lb.
PLUS220 (IXTV)
D (TAB)
Weight
TO-247
TO-3P
PLUS220
TO-268
6.0
5.5
4.0
5.0
g
g
g
g
G
D
S
PLUS220 (IXTV...S)
D (TAB)
Symbol Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
BV DSS V GS = 0 V, I D = 250 μ A
Min. Typ. Max.
600
V
G
S
D (TAB)
V GS(th)
I GSS
V DS = V GS , I D = 250 μ A
V GS = ± 30 V, V DS = 0
3.0
5.0
± 100
V
nA
G = Gate
S = Source
Features
D = Drain
TAB = Drain
I DSS
V DS = V DSS
V GS = 0 V
T J = 125 ° C
25
250
μ A
μ A
l
l
Fast Recovery diode
Unclamped Inductive Switching (UIS)
rated
R DS(on)
V GS = 10 V, I D = 0.5 I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
240
m ?
l
l
International standard packages
Low package inductance
- easy to drive and to protect
? 2006 IXYS All rights reserved
DS99251E(12/05)
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